sot - 223 plastic - encapsulate transistors czt 3055 transistor ( npn ) features ? high current ? low voltage ? complement to czt2955 ? surface mounted power amplifier application maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit c ollector - emitter breakd own voltage v (br) ceo i c = 30 ma , i b =0 6 0 v c ollector - emitter breakdown voltage v (br) cer i c = 30 ma , r b e = 1 0 0 70 v i c e o v ce = 30 v,i b =0 700 a collector cut - off current i c ev v ce = 100 v ,v eb = 1.5v 1 ma emitter cut - off current i ebo v e b = 7 v,i c =0 5 m a h fe (1) v ce = 4 v , i c = 4 a 20 70 dc curr ent gain h fe (2) v ce = 4 v , i c = 6 a 5 collector - emitter saturation voltage v ce(sat) i c = 4 a ,i b = 4 00m a 1.1 v base - emitter voltage v b e v ce = 4 v , i c = 4 a 1.5 v transition frequency f t v ce = 10 v,i c = 500 m a , f=1 m hz 2.5 mhz symbol parameter value unit v cbo collector - b ase v oltage 100 v v ceo collector - e mitter v oltage 60 v v ebo emitter - b ase v oltage 7 v i c collector c urrent 6 a p c collector p ower d issipation 1 w r ja thermal resistance from juncti on to ambient 125 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 sot - 223 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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